It is generally considered that for high voltage/high current applications (900V/100A), vertical device structures might be more suitable owing to their capability of achieving lower specific on-resistance and high breakdown voltage simultaneously. Attractive small-signal and RF power performances are demonstrated for a 2 × 50 × 0.07 m 2 device. Conclusion AlGaN/GaN HEMT grown on free-standing GaN substrate are fabricated. For high-power conversion application, devices with vertical geometry are preferred over lateral geometry, since the former allows more current for a given chip area, therefore making it more economical and feasible solution for high-voltage and high-current application. Download figure: Standard image High-resolution image 4. Gallium nitride (GaN)-based devices have entered the power electronics market and are showing excellent progress in the medium power conversion application. TCAD Simulation of GaN-based Vertical FETs (HEMTs)
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